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180 nm GaFeO3 thin film epitaxially grown on ITO buffered yittria stabilized zirconia. PFM amplitude overlaid on topography (left) and PFM phase overlaid on topography (right). 1.25 µm scan. Sample courtesy of Somdutta Mukherjee, Rajeev Gupta and Ashish Garg, Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur.
Date: 16th November 17
Last Updated: February 20, 2019, 5:23 pm
Author: Asylum Research
Category: Asylum Gallery Image