Part of the Oxford Instruments Group

GaFeO3 Thin Film

180 nm GaFeO3 thin film epitaxially grown on ITO buffered yittria stabilized zirconia. PFM amplitude overlaid on topography (left) and PFM phase overlaid on topography (right). 1.25 µm scan. Sample courtesy of Somdutta Mukherjee, Rajeev Gupta and Ashish Garg, Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur.

Date: 16th November 17

Last Updated: February 20, 2019, 5:23 pm

Author: Asylum Research

Category: Asylum Gallery Image