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GaFeO3 Thin Film

180 nm GaFeO3 thin film epitaxially grown on ITO buffered yittria stabilized zirconia. PFM amplitude overlaid on topography (left) and PFM phase overlaid on topography (right). 1.25 ┬Ám scan. Sample courtesy of Somdutta Mukherjee, Rajeev Gupta and Ashish Garg, Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur.

Date: 16th November 17

Author: Asylum Research

Category: Asylum Gallery Image

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