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Ion Sputtered Silicon Carbide

Classic ion-beam induced cone formation on sputtered Silicon Carbide. Impurities on the original surface give rise to cone growth, shadowed from the incident ion bombardment. Ions reflecting off the cones dig a deeper channel or moat around the base. Imaged with the MFP-3D AFM. Image courtesy of S. MacLaren, University of Illinois at Urbana-Champaign.

Date: 16th November 17

Last Updated: February 20, 2019, 5:23 pm

Author: Asylum Research

Category: Asylum Gallery Image