Using atomic force microscopy (AFM) and energy dispersive x-ray spectrometry (EDS) to measure 2D materials

Two-dimensional (2D) transition metal dichalcogenides show exciting promise for applications in electronic devices and show great potential to replace traditional silicon technology. There are a number of challenges that surround these materials including fabrication integration and characterization. Due to their low dimensional nature, these materials require high resolution techniques, like AFM and SEM, to characterize a range of properties and characteristics.

Download the application note to learn:

• How AFM and SEM, equipped with energy dispersive X-ray spectrometry (EDS), can be combined to produce full structural and compositional characterization of 2D materials
• The potential of 2D transition metal dichalcogenides to replace silicon technology
• How Scanning Kelvin Probe Microscopy (SKPM), in addition to AFM topography, can aid in the characterization of 2D materials
• The importance of using complementary techniques to characterize layer thickness of 2D materials

(Free download, compliments of Asylum Research, the Technology Leader in Atomic Force Microscopy)