Existing data storage solutions are struggling to match the demand for data. It is now widely appreciated that technologies that can simultaneously combine ferroelectric and ferromagnetic storage would allow 4 or 8 bits to be stored in a single cell memory device, offering a very significant advancement over present day single-bit technologies. Researchers at Tyndall National Institute in Cork, Ireland designed a new layered structured material by using the ferroelectric Aurivillius phase structure as a framework. Read how they used AFM and EDS to characterize these multiferroic materials.
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