Multiferroic Data Storage Characterisation with AFM and EDS

Existing data storage solutions are struggling to match the demand for data. It is now widely appreciated that technologies that can simultaneously combine ferroelectric and ferromagnetic storage would allow 4 or 8 bits to be stored in a single cell memory device, offering a very significant advancement over present day single-bit technologies. Researchers at Tyndall National Institute in Cork, Ireland designed a new layered structured material by using the ferroelectric Aurivillius phase structure as a framework. Read how they used AFM and EDS to characterize these multiferroic materials.

This app note describes:

• The need for improved data storage solutions
• How AFM and EDS were used to characterize the multiferroic materials

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